Single-walled carbon nanotubes (SWCNTs) were directly synthesized by a hydrogen arc-discharge method by using only Fe catalyst.The synthesized carbon materials indicated high-purity SWCNTs without amorphous carbon materials from SEM observation.The SWCNTs had diameters of 1.5-2.0 nm from TEM and Raman observation.After a simple purification,TGA indicated that SWCNTs had a purity of ca.90.1 wt %.Field emission from the SWCNT emitters which were fabricated by using a spray method was measured by a diode structure.The vertically aligned SWCNT emitters showed the low turn-on voltage of 0.86 V/mu m and a high emission-current density of 3 mA/cm~2 at an applied field of about 3 V/mu m.From a Fowler-Nordheim plot,the vertically aligned SWCNT revealed a high field enhancement factor of 2.35 x 10~4.The photoemission measurements,excited by a photon energy of 360 eV,showed significantly delocalized graphite-pi:states at the purified SWCNTs.Here,we investigated that the field-emission properties of SWCNTs would be attributed to the high electronic density of states near Fermi energy,including the delocalized graphite-pi:states.
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机译:仅用Fe催化剂通过氢电弧放电法直接合成单壁碳纳米管(SWCNT),SEM观察表明合成的碳材料显示出高纯度的SWCNTs,无定形碳材料,直径为1.5-2.0 nm通过简单的纯化,TGA表明SWCNT的纯度约为90.1 wt%。使用二极管结构测量通过喷涂方法制造的SWCNT发射器的场发射。发射器在约3 V /μm的施加电场下显示出0.86 V /μm的低导通电压和3 mA / cm〜2的高发射电流密度。 SWCNT显示出2.35 x 10〜4的高场增强因子。在360 eV的光子能量的激发下,光发射测量结果显示在纯化的SWCNT处石墨-π:态显着离域。在这里,我们研究了场发射特性单壁碳纳米管的产生归因于费米能量附近的高电子密度,包括离域石墨-π:态。
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