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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Photochemical fine-tuning of luminescent color of cadmium selenide nanoparticles: Fabricating a single-source multicolor luminophore
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Photochemical fine-tuning of luminescent color of cadmium selenide nanoparticles: Fabricating a single-source multicolor luminophore

机译:硒化镉纳米颗粒发光颜色的光化学微调:制备单源多色发光体

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摘要

Size-selective photoetching was applied to silica-coated cadmium selenide (SiO2/CdSe) nanoparticles to precisely control their photoluminescence properties. The absorption spectra of CdSe was blue-shifted by irradiation of monochromatic light, and finally, the absorption onset agreed with the wavelength of irradiation light, indicating that CdSe particles were photoetched to smaller ones until the irradiated photons were not absorbed by the photoetched particles and that the SiO2 shell layer surrounding the CdSe core prevented coalescence between the photoetched particles. Although as-prepared SiO2/CdSe did not exhibit photoluminescence, the application of size-selective photoetching to SiO2/CdSe resulted in the development of the band gap emission, with the degree being enhanced with progress of the photoetching. The peak wavelength of photoluminescence decreased with a decrease in the wavelength used for the photoetching, so that the luminescence color could be tuned between red and blue. Partial photoetching of SiO2/CdSe nanoparticle films produced intense band gap emission of CdSe at the photoetched area, while the remainder of the SiO2/CdSe films did not exhibit detectable photoluminescence, resulting in the formation of a clear photoluminescence image under UV irradiation. This technique makes it possible to produce a multicolored photoluminescence image by irradiation with monochromatic lights having various wavelengths using a single source material.
机译:将尺寸选择光蚀刻应用于二氧化硅涂层的硒化镉(SiO2 / CdSe)纳米颗粒,以精确控制其光致发光性能。通过单色光的照射,CdSe的吸收光谱发生了蓝移,最终吸收开始与照射光的波长一致,表明CdSe颗粒被光蚀刻成较小的颗粒,直到被照射的光子不被光蚀刻的颗粒吸收为止。 CdSe核周围的SiO2壳层阻止了光蚀刻颗粒之间的聚结。尽管制备的SiO 2 / CdSe没有显示出光致发光,但是将尺寸选择光蚀刻应用于SiO 2 / CdSe导致带隙发射的发展,其程度随着光蚀刻的进行而提高。光致发光的峰值波长随着用于蚀刻的波长的减小而减小,从而可以在红色和蓝色之间调节发光颜色。 SiO2 / CdSe纳米颗粒薄膜的部分光蚀刻在光蚀刻区域产生了CdSe的强带隙发射,而其余的SiO2 / CdSe薄膜没有显示出可检测的光致发光,导致在紫外线照射下形成清晰的光致发光图像。该技术使得有可能通过使用单一光源用具有各种波长的单色光照射来产生多色光致发光图像。

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