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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Microstructural heterogeneity for electrochemical activity in polycrystalline diamond thin films observed by electrogenerated chemiluminescence imaging
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Microstructural heterogeneity for electrochemical activity in polycrystalline diamond thin films observed by electrogenerated chemiluminescence imaging

机译:电生化学发光成像观察到的多晶金刚石薄膜电化学活性的微观结构异质性

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Electrogenerated chemiluminescence (ECL) was used to image the spatial variations in electrochemical activity at the heavily doped polycrystalline diamond surface. ECL was generated by the reaction of [Ru(bpy)(3)](2+) and tripropylamine. Images of the chemiluminescence patterns at the polycrystalline diamond surface were recorded photographically after magnification with optical microscopy to show the location and size of individual active regions. The spatial distribution for ECL intensity indicated that the electrochemical reactivity at polycrystalline diamond electrodes was microscopically heterogeneous. The ECL intensities for (100)oriented growth sectors were much lower than those for other growth sectors, and remained at ca. 50% of those for (111) sectors even at the potential at which the intensity reached maximum. The ratios of the ECL intensities for the (100) sector to the average ECL intensities showed a linear relation with the potential, indicating that the conductivity for (100)-oriented microcrystallite is remarkably lower than that for other types of oriented microcrystallite. Micro-Raman imaging was used to investigate the microcrystallite-based heterogeneity for the conductivity at the heavily boron doped polycrystalline diamond. Raman spectra were collected from an area over 42 x 42 mum(2) including (100) and (111) growth sectors at intervals of 3 mum. The Zn map for the intensities of one phonon diamond line reveals that the regions of maximum line intensity correspond to (100)-oriented microcrystallite and the values are approximately 8 times higher than those at (111). The dependence of diamond line intensity on the boron doping levels in diamond indicates that the boron concentration in (100)-odented microcrystallite is I order of magnitude lower than that in (111). Heavily doped polycrystalline diamond film contains microcrystals with different boron doping levels, i.e., semiconductor and semimetallic diamond microcrystals. This microstructural heterogeneity for boron concentration might affect almost all electrochemical activity at heavily doped polycrystalline diamond electrodes.
机译:使用电化学发光(ECL)来成像重掺杂多晶金刚石表面电化学活性的空间变化。通过[Ru(bpy)(3)](2+)与三丙胺的反应生成ECL。用光学显微镜放大后,照相记录多晶金刚石表面的化学发光图案图像,以显示各个活性区域的位置和大小。 ECL强度的空间分布表明,多晶金刚石电极的电化学反应性在微观上是异质的。面向(100)增长部门的ECL强度远低于其他增长部门的ECL强度,并保持在大约1。即使在强度达到最大的电位下,(111)个扇区的50%。 (100)扇区的ECL强度与平均ECL强度的比值与电势呈线性关系,表明(100)取向的微晶的电导率明显低于其他类型的取向的微晶。显微拉曼成像用于研究重掺杂硼的多晶金刚石在电导率上的基于微晶的异质性。拉曼光谱是从42 x 42毫米(2)上的区域收集的,其中包括(100)和(111)生长区,间隔为3毫米。一条声子菱形线强度的Zn图表明,最大线强度区域对应于(100)取向的微晶,其值大约是(111)的8倍。金刚石线强度对金刚石中硼掺杂水平的依赖性表明,(100)-齿微晶中的硼浓度比(111)中的硼浓度低一个数量级。重掺杂的多晶金刚石膜包含具有不同硼掺杂水平的微晶,即半导体和半金属金刚石微晶。硼浓度的这种微观结构异质性可能会影响重掺杂多晶金刚石电极上几乎所有的电化学活性。

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