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首页> 外文期刊>The Journal of Neuroscience: The Official Journal of the Society for Neuroscience >Specific sites within the ligand-binding domain and ion channel linkers modulate NMDA receptor gating.
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Specific sites within the ligand-binding domain and ion channel linkers modulate NMDA receptor gating.

机译:配体结合域和离子通道接头内的特定位点可调节NMDA受体门控。

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Gating in the NMDA receptor is initiated in the extracellular ligand-binding domain (LBD) and is ultimately propagated via three linkers-S1-M1, M3-S2, and S2-M4-to the ion channel. M3-S2 directly couples LBD movements into channel gating, but the functional and structural contributions of S1-M1 and S2-M4 to the overall gating process are unknown. A scan of substituted cysteines in and around the NMDA receptor S1-M1 and S2-M4 with a bulky cysteine-reactive reagent identified numerous positions that showed potentiation of glutamate-activated as well as leak currents. As indexed by MK801 (dizocilpine hydrogen maleate), an open channel blocker, this potentiation was attributable to an increase in open probability, an interpretation confirmed for a subset of positions with single-channel recordings. The magnitude of this gating effect, acting through S1-M1 or S2-M4, was dependent on the intrinsic gating properties of the NMDA receptors, being more effective in the inherently low open probability GluN2C- than the higher open probability GluN2A-subunit-containing receptors. For the majority of these potentiation positions, we propose that alteration of gating arises from steric destabilization of contact interfaces where close apposition of the contacting partners is necessary for efficient channel closure. Our results therefore indicate that the NMDA receptor S1-M1 and S2-M4 linkers are dynamic during gating and can modulate the overall energetics of this process. Furthermore, the results conceptualize a mechanistic, as well as a possible structural, framework for pharmacologically targeting the linkers through noncompetitive and subunit-specific modes of action.
机译:NMDA受体的门控起始于细胞外配体结合域(LBD),并最终通过三个接头S1-M1,M3-S2和S2-M4-传播至离子通道。 M3-S2将LBD运动直接耦合到通道门控中,但是S1-M1和S2-M4对整个门控过程的功能和结构贡献尚不清楚。用庞大的半胱氨酸反应试剂对NMDA受体S1-M1和S2-M4内及其周围的取代半胱氨酸进行扫描,发现了许多位置,这些位置显示出谷氨酸激活的能力以及泄漏电流。正如MK801(马来酸地佐西平氢盐)(一种开放通道阻滞剂)所指出的,这种增强作用归因于开放概率的增加,这一解释证实了具有单通道记录的部分位置。通过S1-M1或S2-M4起作用的这种门控效应的大小取决于NMDA受体的固有门控特性,在固有的低打开概率GluN2C-中,比包含较高打开概率的GluN2A-亚基更有效受体。对于大多数这些增强位置,我们提出门控的改变是由接触界面的空间不稳定引起的,其中为了有效的通道闭合,接触伙伴的紧密并置是必要的。因此,我们的结果表明,NMDA受体S1-M1和S2-M4接头在门控过程中是动态的,可以调节此过程的总体能量。此外,该结果概念化了通过非竞争性和亚基特异性作用方式以药理学靶向接头的机制以及可能的结构框架。

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