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Transition from dynamic to static disorder in one-dimensional organic semiconductors

机译:一维有机半导体从动态到静态无序的过渡

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摘要

A generic model Hamiltonian is proposed for the study of the transport in a quasi-one-dimensional semiconductor in the charge transport regime intermediate between dynamic localization and static localization due to structural disorder. This intermediate regime may be appropriate for many organic semiconductors, including polymers, discotic liquid crystals, and DNA. The dynamics of the charge carrier is coupled to classical Langevin oscillators whose spectral density can be adjusted to model experimental systems of interest. In the proposed model, the density of states is constant (at constant temperature) and the transition from dynamic to static disorder is controlled by a single parameter. This paper further clarifies that the density of states may not contain all the information needed to describe the charge transport in some materials.
机译:提出了一种通用模型哈密顿量用于研究准一维半导体中由于结构紊乱而在动态局部和静态局部之间的电荷输运状态中的输运。这种中间机制可能适用于许多有机半导体,包括聚合物,盘状液晶和DNA。电荷载流子的动力学耦合到经典的兰格文振荡器,其频谱密度可以调整以对感兴趣的实验系统建模。在提出的模型中,状态密度是恒定的(在恒温下),并且从动态到静态无序的过渡由单个参数控制。本文进一步阐明,状态密度可能不包含描述某些材料中电荷传输所需的全部信息。

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