首页> 外文期刊>The Journal of Chemical Physics >Electronic structures of defects in ZnO: Hybrid density functional studies
【24h】

Electronic structures of defects in ZnO: Hybrid density functional studies

机译:ZnO中缺陷的电子结构:混合密度泛函研究

获取原文
获取原文并翻译 | 示例
           

摘要

Theoretical investigation of the defect energy levels in band gap for ZnO is of great importance to understand the photoluminescence (PL) spectrum in experiment. However, the "band-gap" problem in the density functional calculations leads to incorrect evaluation of the defect levels inside the band gap. In this work, we perform hybrid density functional calculation, which can accurately predict the band gap width and the gap states, to study the electronic structures of both native defects and doped impurities of Li, Na, K, and Ag in ZnO. Our results show that both the vacancies and octahedral self-interstitials of O and Zn contribute to the broad green PL spectrum observed in experiments. In addition, the gap states arising from these doped impurities are predicted, where some of the gap states match with the experimental values. Moreover, the characters of these gap states are discussed based on the calculated density of states. (C) 2008 American Institute of Physics. DOI: [10.1063/1.2993166]
机译:ZnO带隙中缺陷能级的理论研究对于理解实验中的光致发光(PL)光谱非常重要。但是,密度泛函计算中的“带隙”问题导致对带隙内缺陷水平的错误评估。在这项工作中,我们进行混合密度泛函计算,可以准确地预测带隙宽度和带隙状态,以研究ZnO中自然缺陷和Li,Na,K和Ag掺杂杂质的电子结构。我们的结果表明,O和Zn的空位和八面体自填隙都有助于在实验中观察到较宽的绿色PL光谱。另外,预测了由这些掺杂杂质引起的间隙状态,其中一些间隙状态与实验值匹配。此外,基于计算出的态密度讨论了这些间隙态的特性。 (C)2008美国物理研究所。 DOI:[10.1063 / 1.2993166]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号