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Formation of ordered microphase-separated pattern during spin coating of ABC triblock copolymer

机译:ABC三嵌段共聚物旋涂过程中有序微相分离图案的形成

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In this paper, the authors have systematically studied the microphase separation and crystallization during spin coating of an ABC triblock copolymer, polystyrene-b-poly(2-vinylpyridine)-b-poly(ethylene oxide) (PS-b-P2VP-b-PEO). The microphase separation of PS-b-P2VP-b-PEO and the crystallization of PEO blocks can be modulated by the types of the solvent and the substrate, the spinning speed, and the copolymer concentration. Ordered microphase-separated pattern, where PEO and P2VP blocks adsorbed to the substrate and PS blocks protrusions formed hexagonal dots above the P2VP domains, can only be obtained when PS-b-P2VP-b-PEO is dissolved in N,N-dimethylformamide and the films are spin coated onto the polar substrate, silicon wafers or mica. The mechanism of the formation of regular pattern by microphase separation is found to be mainly related to the inducement of the substrate (middle block P2VP wetting the polar substrate), the quick vanishment of the solvent during the early stage of the spin coating, and the slow evaporation of the remaining solvent during the subsequent stage. On the other hand, the probability of the crystallization of PEO blocks during spin coating decreases with the reduced film thickness. When the film thickness reaches a certain value (3.0 nm), the extensive crystallization of PEO is effectively prohibited and ordered microphase-separated pattern over large areas can be routinely prepared. When the film thickness exceeds another definite value (12.0 nm), the crystallization of PEO dominates the surface morphology. For films with thickness between these two values, microphase separation and crystallization can simultaneously occur. (c) 2007 American Institute of Physics.
机译:在本文中,作者系统地研究了旋涂ABC三嵌段共聚物,聚苯乙烯-b-聚(2-乙烯基吡啶)-b-聚环氧乙烷(PS-b-P2VP-b- PEO)。 PS-b-P2VP-b-PEO的微相分离和PEO嵌段的结晶可通过溶剂和底物的类型,纺丝速度和共聚物浓度来调节。只有当PS-b-P2VP-b-PEO溶解在N,N-二甲基甲酰胺和N-N-二甲基甲酰胺中时,才能获得有序的微相分离图案,其中PEO和P2VP嵌段吸附到基质上,而PS嵌段突起在P2VP域上方形成六角点。将薄膜旋涂到极性基材,硅片或云母上。发现通过微相分离形成规则图案的机理主要与底物的诱导(中间嵌段P2VP润湿极性底物),旋涂早期溶剂的快速消失以及涂层的形成有关。在后续阶段缓慢蒸发剩余溶剂。另一方面,在旋涂期间PEO嵌段结晶的可能性随着膜厚度的减小而降低。当膜厚度达到一定值(3.0nm)时,有效地阻止了PEO的广泛结晶,并且可以常规地制备大面积上有序的微相分离的图案。当膜厚度超过另一个确定的值(12.0 nm)时,PEO的结晶将主导表面形态。对于厚度在这两个值之间的薄膜,微相分离和结晶会同时发生。 (c)2007年美国物理研究所。

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