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Molecular simulation of xenon adsorption on single-walled carbon nanotubes

机译:氙在单壁碳纳米管上吸附的分子模拟

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Adsorption of xenon on single-walled (10,10) carbon nanotubes at a temperature of 95 K has been studied by molecular simulation and the results have been compared with recent experiments [A. Kuznetsova, J. T. Yates, Jr., I. Liu, and R. B. Smalley, I. Chem. Phys. 112, 9590 (2000)]. Simulations indicate that adsorption takes place primarily on the inside of the nanotubes at the experimental conditions. Interstitial and external adsorption were found to be negligible in comparison with adsorption inside the nanotubes. The coverage computed from simulation of 0.06 Xe—C is in good agreement with the experimentally measured value of 0.042 Xe—C. The isosteric heat of adsorption from simulation ranges from about 3000 to 4500 K as a function of coverage, which is consistent with the experimental desorption activation energy of 3220 K. Adsorption on the external surfaces of the nanotubes is observed to take place at Xe pressures that are larger than those probed in the experiments. The good agreement between simulations and experiments for the coverage and heat of adsorption indicate that the curvature of the nanotube does not substantially perturb the adsorption potential from that of a graphene sheet.
机译:通过分子模拟研究了氙在95 K温度下在单壁(10,10)碳纳米管上的吸附,并将结果与​​最近的实验进行了比较[A.库兹涅佐娃(J.T. Yates,Jr.),刘(I.Liu)和R.B.物理112,9590(2000)]。模拟表明在实验条件下吸附主要发生在纳米管的内部。与纳米管内部的吸附相比,发现间隙和外部吸附微不足道。由0.06 Xe-C的模拟计算得出的覆盖率与0.042 Xe-C的实验测量值非常吻合。模拟的吸附等排热范围为覆盖范围的函数,范围为约3000至4500 K,这与3220 K的实验解吸活化能相符。观察到纳米管外表面的吸附在Xe压力下进行。比实验中所探查的更大。模拟和实验之间关于吸附的覆盖率和热量的良好一致性表明,纳米管的曲率基本上不会干扰石墨烯片的吸附势。

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