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Chemical structure of dihydride phase on saturated H-chemisorbed Si surfaces

机译:饱和的H化学吸附的Si表面上的二氢化物相的化学结构

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By observing infrared absorption features including dynamic polarizations due to Si—H stretching vibrations. chemical structures were determined on H-chemisorbed single-crystal Si surfaces that were formed in solution. A technique using polarized infrared multiple internal reflections was applied. The absorption features were obtained as a function of surface H density by systematically tilting the orientation of the surfaces from (111) through (113) up to (001). For surface orientations from (1 ii) to (113), narrow absorption peaks. which had been assigned due to the strained vertical dibydride, and (11 1)-terrace monohydride species were predominantly observed. But, as the surface orientation moved away from (11 1). narrow peaks with dynamic polarizations in the (rio) plane were observed for the first time. Meanwhile, the broad feature with several peaks in the whole Si—H stretching region was detected in the surface-parallel component of dynamic polarization. Because the absorption area for the surface parallel component increased monotonically with the angle, the features were concluded to be localized at the vertical-dihydride step edges along (110> A complex composed of a strained horizontal dihydride and a strained monohydride provided a temporary explanation. On (001), the peaks caused by the strained vertical dihydride disappeared completely, and the predominant peaks were those observed for the first time on the other surfaces. A major part of the (001) surface was composed of the complex. The microscopic origin for the appearance of such a disordered structure is described.
机译:通过观察红外吸收特征,包括由于Si-H拉伸振动引起的动态极化。在溶液中形成的H化学吸附的单晶Si表面上确定化学结构。应用了使用偏振红外多重内反射的技术。通过将表面的方向从(111)到(113)直到(001),系统地倾斜,可以得到吸收特征随表面H密度的变化。对于从(1 ii)到(113)的表面取向,窄吸收峰。由于应变的垂直二叠氮化物而被指定,并且主要观察到(11 1)-race一氢化物。但是,随着表面方向远离(11 1)。首次观察到在(rio)平面具有动态极化的窄峰。同时,在动态极化的表面平行分量中检测到在整个Si-H拉伸区域中具有几个峰的宽广特征。由于表面平行分量的吸收面积随角度单调增加,因此得出结论认为这些特征沿(110>由应变的水平二氢化物和应变的一氢化物组成的络合物位于垂直的二氢化物台阶边缘处)提供了暂时的解释。在(001)上,由垂直二氢化物应变引起的峰完全消失,并且主要的峰是在其他表面上首次观察到的峰,(001)表面的主要部分由配合物组成。描述了这种无序结构的外观。

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