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首页> 外文期刊>Polymer: The International Journal for the Science and Technology of Polymers >Preparation of homopolymers from new azobenzene organic molecules with different terminal groups and study of their nonvolatile memory effects
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Preparation of homopolymers from new azobenzene organic molecules with different terminal groups and study of their nonvolatile memory effects

机译:由具有不同端基的新型偶氮苯有机分子制备均聚物及其非挥发性记忆效应的研究

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Two new azo organic molecules Azo-OCH_3 and Azo-Br were synthesized by using electron-donating moiety methoxyphenyl and electron-accepting moiety bromophenyl as a terminal group respectively. Two monomers MAzo-OCH_3 and MAzo-Br based on them were also synthesized and corresponding homopolymers PAzo-OCH_3 and PAzo-Br were prepared by free radical polymerization. Azo-OCH_3 and Azo-Br were fabricated as films by vacuum evaporation while PAzo-OCH_3 and PAzo-Br were fabricated as films by simple spin-coating and all of them were then prepared as sandwich memory devices ITO/Azo-OCH_3/Al, ITO/Azo-Br/Al, ITO/PAzo-OCH3/Al and ITO/PAzo-Br/Al respectively. According to the measurements, all devices exhibited stable binary WORM-type (write once and read many times) memory effects. However, ITO/Azo-OCH_3/Al and ITO/Azo-Br/Al exhibited different turn-on threshold voltages of about -2, -3.6 V respectively. It illustrated that to organic molecule anchoring electron-donor as a terminal group shows lower turn-on threshold voltage, which was related to low-power consumption. Moreover, the ITO/polymer/Al devices have successfully preserved the memory performance of devices based on corresponding organic molecules. Therefore, we successfully achieved the advantages of low-cost and low-power consumption by designing molecular structures and easy fabrication by polymerization.
机译:以给电子部分甲氧基苯基和受电子部分溴苯基为末端基合成了两个新的偶氮有机分子Azo-OCH_3和Azo-Br。还合成了基于它们的两种单体MAzo-OCH_3和MAzo-Br,并通过自由基聚合制备了相应的均聚物PAzo-OCH_3和PAzo-Br。通过真空蒸发将Azo-OCH_3和Azo-Br制成薄膜,而通过简单旋涂将PAzo-OCH_3和PAzo-Br制成薄膜,然后将它们全部制成三明治存储器件ITO / Azo-OCH_3 / Al,分别为ITO /偶氮-Br / Al,ITO / PAzo-OCH3 / Al和ITO / PAzo-Br / Al。根据测量,所有设备均表现出稳定的二进制WORM类型(一次写入和多次读取)的存储效果。但是,ITO / Azo-OCH_3 / Al和ITO / Azo-Br / Al分别具有大约-2,-3.6 V的不同开启阈值电压。这说明以有机分子锚定电子给体作为末端基团具有较低的开启阈值电压,这与低功耗有关。此外,ITO /聚合物/ Al器件已成功保留了基于相应有机分子的器件的存储性能。因此,我们通过设计分子结构和易于聚合制备成功地实现了低成本和低功耗的优势。

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