首页> 外文期刊>Polymer: The International Journal for the Science and Technology of Polymers >Preparation, morphology, and ultra-low dielectric constants of benzoxazine-based polymers/polyhedral oligomeric silsesquioxane (POSS) nanocomposites
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Preparation, morphology, and ultra-low dielectric constants of benzoxazine-based polymers/polyhedral oligomeric silsesquioxane (POSS) nanocomposites

机译:苯并恶嗪基聚合物/多面体低聚倍半硅氧烷(POSS)纳米复合材料的制备,形态和超低介电常数

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摘要

Nanocomposites of benzoxazine-based polymers/polyhedral oligomeric silsesquioxane (POSS) have been prepared through copolymerization of furan-containing benzoxazine compounds and methylmethacrylate-POSS (MMA-POSS). Nanocomposites having MMA-POSS fractions of 0-70 wt% (POSS fractions of 0-28 wt%) are obtained. The high contents of MMA-POSS of the nanocomposites result in a reduction of their dielectric constants to 2.3. Moreover, some nanocomposites display POSS orientation into lamellar structures in nanometer sizes. The POSS orientation further reduces the dielectric constants of the nanocomposites to about 1.9. Hence, the prepared nanocomposites could be used as ultra-low-k materials for advanced microelectronics.
机译:通过含呋喃的苯并恶嗪化合物与甲基丙烯酸甲酯-POSS(MMA-POSS)的共聚制备了基于苯并恶嗪的聚合物/多面体低聚倍半硅氧烷(POSS)的纳米复合材料。获得具有0-70重量%的MMA-POSS分数(0-28重量%的POSS分数)的纳米复合材料。纳米复合材料的高含量MMA-POSS导致其介电常数降至2.3。此外,一些纳米复合材料将POSS取向显示为纳米尺寸的层状结构。 POSS取向进一步将纳米复合材料的介电常数降低至约1.9。因此,制备的纳米复合材料可用作先进微电子学的超低k材料。

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