Transport through the interface between a semiconducting carbon nanotube and a metal electrode - art. no. 073307

摘要

We report a numerical study of the tunnel conductance through the Schottky barrier at the contact between a semiconducting carbon nanotube and a metal electrode. In a planar gate model the asymmetry between the p-doped and the n-doped region is shown to depend mainly on the difference between the electrode Fermi level and the band gap of carbon nanotubes. We quantitatively show how the gateanotube distance is important to get large on-off ratios. We explain the bend of the current versus gate voltage as the transition from a thermal-activation region to a tunneling region. A good agreement is obtained with experimental results for carbon nanotubes field-effect transistors. [References: 28]