Magnetotransport properties of the ternary carbide Ti3SiC2: Hall effect, magnetoresistance, and magnetic susceptibility - art. no. 035113

摘要

In this study we report on the transport properties of the Ti-based ternary carbide Ti3SiC2. The Hall effect and longitudinal magnetoresistance have been measured as a function of temperature in the 4-300 K range and at magnetic fields up to 5 T. The magnetoresistance is dominated by a positive quadratic field dependence at low temperatures. The Hall voltage is a linear function of magnetic field over the range of temperatures investigated. The effective carrier concentration and mobilities were calculated based on the sign and value of the Hall coefficient. These results are discussed in terms of a two-band model and compared to the single-band approximation. The magnetic susceptibility (4.1 x 10(-6)) was found to be independent of temperature and field. These results were used to evaluate the charge concentration in light of Pauli paramaganetism theory. [References: 16]