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Modeling STM tips by single absorbed atoms on W(100) films: 3d and 4d transition-metal atoms - art. no. 125108

机译:用W(100)膜上的单个吸收原子建模STM尖端:3d和4d过渡金属原子-艺术。没有。 125108

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摘要

In order to provide comprehensive data on the electronic structure of realistic STM tips we have studied tungsten (100) films with adsorbed single 3d and 4d transition-metal atoms by ab initio molecular-dynamics and full potential methods. Molecular dynamics using ultrasoft pseudopotentials has been used to determine the relaxation of adsorbate and surface layers. Subsequently the electronic structure of the relaxed model tip has been calculated with an all-electron full potential method. The results suggest that the chemical nature of the tip apex to a high degree determines achievable corrugations and that results for current and corrugation values in a perturbation approach might be considerably improved by including the electronic structure of the tip. [References: 24]
机译:为了提供有关实际STM尖端电子结构的全面数据,我们通过从头算分子动力学和全能方法研究了吸附了单个3d和4d过渡金属原子的钨(100)薄膜。使用超软假电位的分子动力学已用于确定被吸附物和表面层的弛豫。随后,已用全电子全电位法计算了松弛模型尖端的电子结构。结果表明,尖端的化学性质在很大程度上决定了可达到的波纹,并且通过包括尖端的电子结构,可以显着改善微扰方法中电流和波纹值的结果。 [参考:24]

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