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首页> 外文期刊>Physica, C. Superconductivity and its applications >Calculations of AC current losses and AC magnetic losses from the scanning Hall probe measurements for a coated conductor
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Calculations of AC current losses and AC magnetic losses from the scanning Hall probe measurements for a coated conductor

机译:根据涂层导体的扫描霍尔探头测量结果计算交流电流损耗和交流磁损耗

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We measured the field profiles near the surface of a coated conductor (CC) by using the scanning Hall probe method. The external currents, represented by I-a, or the external fields, represented by H-a, were applied during the measurements. The field was applied in the normal direction with respect to the tape surface. The measured field profiles could be expressed by H(x, X-a), where the variable, X-a, was either I-a or Ha. The x-axis was parallel to the in-plane transverse direction of the CC tape. The CC tape was fabricated by the IBAD-PLD method. The applied field (current), H-a (I-a), was decreased stepwise from H-peak to -H-peak (from I-peak to -I-peak). From H(x, X-a), we calculated the current profile, J(x, X-a), by the iterative inversion method. From J(x, X-a) and the corresponding flux densities, B(x, X-a) we calculated the AC current loss, Q(C)(I-peak), and the AC magnetic loss, Q(M)(H-peak), for various values Of I-peak and H-peak, respectively. The characteristic functions were defined by f(C) = pi Q(C)/mu I-0(c)2 and f(M) = pi Q(M),/mu 0I(c)(2), where I-c is the critical current. We found that the calculated values of f(C) (f(M)) were similar to the experimental values of f(C) (f(M)) which were directly measured for the IBAD-PLD CCs. On the other hand, the values of f(C) (f(M)) were smaller than (larger than) the values estimated from the experimentally observed Q(C) (Q(M)) in RABiTS (TM)-MOD CCs.
机译:我们使用扫描霍尔探针法测量了涂层导体(CC)表面附近的场轮廓。在测量期间施加由I-a表示的外部电流或由H-a表示的外部场。相对于带表面沿法线方向施加磁场。测得的场剖面可以用H(x,X-a)表示,其中变量X-a是I-a或Ha。 x轴平行于CC带的平面内横向。 CC磁带是通过IBAD-PLD方法制造的。从H峰到-H峰(从I峰到-I峰)逐步减小了施加的电场(电流)H-a(I-a)。从H(x,X-a),我们通过迭代反演方法计算了当前轮廓J(x,X-a)。根据J(x,Xa)和相应的磁通密度B(x,Xa),我们计算出交流电流损耗Q(C)(I-peak)和交流磁损耗Q(M)(H-peak) ),分别用于I-peak和H-peak的各种值。特征函数由f(C)= pi Q(C)/ mu I-0(c)2和f(M)= pi Q(M),/ mu 0I(c)(2)定义,其中Ic为临界电流。我们发现,f(C)(f(M))的计算值类似于为IBAD-PLD CC直接测量的f(C)(f(M))的实验值。另一方面,f(C)(f(M))的值小于(大于)RABiTS(TM)-MOD CC中根据实验观察到的Q(C)(Q(M))估计的值。

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