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Phononic band structures and stability analysis using radial basis function method with consideration of different interface models

机译:考虑不同界面模型的声子能带结构及径向基稳定性分析

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In this paper, a meshless radial basis function (RBF) collocation method is developed to calculate the phononic band structures taking account of different interface models. The present method is validated by using the analytical results in the case of perfect interfaces. The stability is fully discussed based on the types of RBFs, the shape parameters and the node numbers. And the advantages of the proposed RBF method compared to the finite element method (FEM) are also illustrated. In addition, the influences of the spring-interface model and the three-phase model on the wave band gaps are investigated by comparing with the perfect interfaces. For different interface models, the effects of various interface conditions, length ratios and density ratios on the band gap width are analyzed. The comparison results of the two models show that the weakly bonded interface has a significant effect on the properties of phononic crystals. Besides, the band structures of the spring-interface model have certain similarities and differences with those of the three-phase model. (C) 2016 Elsevier B.V. All rights reserved.
机译:本文提出了一种无网格径向基函数(RBF)配置方法来计算考虑不同界面模型的声子带结构。在完美界面的情况下,通过分析结果验证了本方法的有效性。根据RBF的类型,形状参数和节点编号充分讨论了稳定性。并且还说明了所提出的RBF方法与有限元方法(FEM)相比的优势。另外,通过与理想界面的比较,研究了弹簧界面模型和三相模型对带隙的影响。对于不同的界面模型,分析了各种界面条件,长度比和密度比对带隙宽度的影响。两种模型的比较结果表明,弱键合界面对声子晶体的性能有很大影响。此外,弹簧界面模型的能带结构与三相模型有一定的异同。 (C)2016 Elsevier B.V.保留所有权利。

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