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首页> 外文期刊>Physica, B. Condensed Matter >A study of electric-field-induced second-harmonic generation in asymmetrical Gaussian potential quantum wells
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A study of electric-field-induced second-harmonic generation in asymmetrical Gaussian potential quantum wells

机译:非对称高斯势量子阱中电场诱导的二次谐波产生的研究

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摘要

Electric-field-induced second-harmonic generation in asymmetrical Gaussian potential quantum wells is investigated using the effective mass approximation employing the compact density matrix method and the iterative approach. Our results show that the absolute value, the real part and the imaginary part of second-harmonic generation are greatly affected by the height of the Gaussian potential quantum wells, the range of the Gaussian confinement potential and the applied electric field. The relationship between the absolute value and the imaginary part of second-harmonic generation together with the relationship between the absolute value and the real part of second-harmonic generation is studied. It is found that no matter how the height of the Gaussian potential quantum wells, the range of the Gaussian confinement potential and the applied electric field vary, the resonant peaks of the absolute value of second-harmonic generation do not originate from the imaginary part but from the real part.
机译:利用紧凑密度矩阵法和迭代法,采用有效质量近似法研究了非对称高斯势量子阱中电场引起的二次谐波产生。我们的结果表明,二次谐波产生的绝对值,实部和虚部都受到高斯势能量子阱高度,高斯约束势能范围和施加电场的影响。研究了二次谐波产生的绝对值与虚部之间的关系,以及二次谐波产生的虚部与绝对值之间的关系。发现无论高斯势能量子阱的高度,高斯约束势能的范围以及所施加的电场如何变化,二次谐波产生的绝对值的共振峰都不是来自虚部,而是来自虚部。从真实的部分来看。

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