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首页> 外文期刊>Physica, B. Condensed Matter >First principles calculations of N: H co-doping effect on energy gap narrowing of ZnO
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First principles calculations of N: H co-doping effect on energy gap narrowing of ZnO

机译:N:H共掺杂对ZnO能隙变窄的第一性原理计算

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Electronic structures of undoped, nitrogen-doped (N-doped), and nitrogen with hydrogen co-doped (N:H-doped) ZnO are calculated using the density functional theory. An isolated electron state in the band gap is formed in the N-doped ZnO with almost unchanged band gap. However, for the N:H-doped ZnO, the band gap is reduced to 3.0 eV from its original value of 3.2 eV in the undoped ZnO. It is therefore supposed that N:H co-doping could be an effective approach to enhance the visible-light photocatalytic efficiency inZnO.
机译:使用密度泛函理论计算了未掺杂,氮掺杂(N掺杂)和氮与氢共掺杂(N:H掺杂)ZnO的电子结构。带隙中的孤立电子态在带隙几乎不变的N掺杂ZnO中形成。但是,对于N:H掺杂的ZnO,带隙从未掺杂ZnO中的原始值3.2 eV减小到3.0 eV。因此,认为N:H共掺杂可能是提高ZnO中可见光光催化效率的有效方法。

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