Local cathodoluminescence study of defects in semiconductors and multilayer structures

摘要

Local cathodoluminescence (CL) method gives a lot of new possibilities comparing with photoluminescence.One of the most important features of the cathodoluminescent method is possibility of depth examination of semiconductor structure emission properties from 10nm up to several microns. This permits one to study the luminescent properties in depth, to define the value diffusion length of charge carrier in the structures, to characterize carrier transport properties of the multilayer structures, to determine the presence and the activation energy of the electron traps. These CL features were used for studying multilayer structures based on InAlGaN and A~(III)B~V.