Raman scattering on H2 in platelets in silicon

摘要

A Raman scattering study of H2 trapped within f111g oriented platelets in Si has been performed. The rotational transitions S_0(J) for J=0; 1; 2, and 3 are identified at 353, 587, 815, and 1034cm~(-1), respectively. At low temperatures, ortho-to-para conversion of H_2 trapped within platelets is observed and suggested to be caused by interaction of nearby H_2 molecules. The contributions of ortho- and para-H_2 to the vibrational Q_1(J) broad band at 4150cm~(-1) are identified.