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首页> 外文期刊>Physica, B. Condensed Matter >Preparation and characterization of CuIn0.75Al0.25Se2 thin films by co-evaporation
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Preparation and characterization of CuIn0.75Al0.25Se2 thin films by co-evaporation

机译:共蒸镀CuIn0.75Al0.25Se2薄膜的制备与表征

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Single-phase Culn(0.75)Al(0.25)Se(2) thin films were deposited by four-source co-evaporation method on soda lime glass substrates held at 673 K. Post-deposition annealing of the films in selenium atmosphere was carried out for an hour at 723 K. X-ray diffraction (XRD) studies of the films revealed the structure to be chalcopyrite with a = 0.577 and c = 1.141 run. Optical absorption studies of the films indicated three-fold band structure. Crystal field (Delta(CF)) and spin-orbit (Delta(SO)) splitting parameters were deduced from the optical band gap values obtained. The deformation potential was estimated by using quasi-cubic model and the percentage of hybridization of the orbitals was determined using linear hybridization model. The films are found to be p-type conducting and the temperature dependence of conductivity studies are carried out to determine the activation energies of the films. (c) 2006 Elsevier B.V. All rights reserved.
机译:通过四源共蒸发法在673 K的钠钙玻璃基板上沉积单相Culn(0.75)Al(0.25)Se(2)薄膜。在硒气氛中进行薄膜的后沉积退火在723K下静置一个小时。薄膜的X射线衍射(XRD)研究表明该结构为黄铜矿,a = 0.577,c = 1.141nm。薄膜的光吸收研究表明三倍能带结构。从获得的光学带隙值推导了晶体场(Delta(CF))和自旋轨道(Delta(SO))分裂参数。使用准三次模型估计变形潜力,并使用线性杂交模型确定轨道的杂交百分比。发现该膜是p型导电的,并且进行了电导率的温度依赖性研究以确定膜的活化能。 (c)2006 Elsevier B.V.保留所有权利。

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