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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Quasi-intrinsic colossal permittivity in Nb and In co-doped rutile TiO2 nanoceramics synthesized through a oxalate chemical-solution route combined with spark plasma sintering
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Quasi-intrinsic colossal permittivity in Nb and In co-doped rutile TiO2 nanoceramics synthesized through a oxalate chemical-solution route combined with spark plasma sintering

机译:草酸盐化学溶液结合火花等离子体烧结合成Nb和In共掺杂金红石型TiO2纳米陶瓷的准本征巨介电常数

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Nb and In co-doped rutile TiO2 nanoceramics (n-NITO) were successfully synthesized through a chemical-solution route combined with a low temperature spark plasma sintering (SPS) technique. The particle morphology and the microstructure of n-NITO compounds were nanometric in size. Various techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG)/differential thermal analysis (DTA), Fourier transform infrared (FTIR), and Raman spectroscopy were used for the structural and compositional characterization of the synthesized compound. The results indicated that the as-synthesized n-NITO oxalate as well as sintered ceramic have a co-doped single phase of titanyl oxalate and rutile TiO2, respectively. Broadband impedance spectroscopy revealed that novel colossal permittivity (CP) was achieved in n-NITO ceramics exhibiting excellent temperature-frequency stable CP (up to 10(4)) as well as low dielectric loss (similar to 5%). Most importantly, detailed impedance data analyses of n-NITO compared to microcrystalline NITO (mu-NITO) demonstrated that the origin of CP in NITO bulk nanoceramics might be related with the pinned electrons in defect clusters and not to extrinsic interfacial effects.
机译:Nb和In共掺杂金红石型TiO2纳米陶瓷(n-NITO)是通过化学溶液法与低温火花等离子体烧结(SPS)技术相结合而成功合成的。 n-NITO化合物的颗粒形态和微观结构为纳米级。 X射线衍射(XRD),X射线光电子能谱(XPS),热重(TG)/差热分析(​​DTA),傅里叶变换红外(FTIR)和拉曼光谱等各种技术用于结构和组成合成化合物的表征。结果表明,合成后的草酸正-NITO和烧结陶瓷分别具有共掺杂的单氧钛草酸酯和金红石型TiO2。宽带阻抗谱显示,在具有优异的温度-频率稳定CP(高达10(4))和低介电损耗(约5%)的n-NITO陶瓷中,实现了新的巨介电常数(CP)。最重要的是,与微晶NITO(mu-NITO)相比,n-NITO的详细阻抗数据分析表明,NITO块状纳米陶瓷中CP的起源可能与缺陷簇中固定的电子有关,而与外部界面效应无关。

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