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Stacked functionalized silicene: a powerful system to adjust the electronic structure of silicene

机译:堆叠式功能化硅酮:强大的系统,可调节硅酮的电子结构

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Herein, we employed first principle density functional periodic calculations to characterize the silicon counterpart of graphene: silicene. We found that silicene is far more reactive than graphene, very stable and strong Si-X bonds can be formed, where X = H, CH3, OH and F. The Si-F bond is the strongest one, with a binding energy of 114.9 kcal mol(-1). When radicals are agglomerated, the binding energy per functional grows up to 17 kcal mol(-1). The functionalization with OH radicals produces the largest alterations of the structure of silicene, due to the presence of intralayer hydrogen bonds. The covalent addition of H, CH3, OH and F to silicene enables the adjustment of its electronic structure. In effect, functionalized silicene can be a semiconductor or even exhibit metallic properties when the type and concentration of radicals are varied. The most interesting results were obtained when two layers of functionalized silicene were stacked, given that the band gaps experienced a significant reduction with respect to those computed for symmetrically and asymmetrically (Janus) functionalized monolayer silicenes. In the case of fluorine, the largest changes in the electronic structure of bilayer silicene were appreciated when at least one side of silicene was completely fluorinated. In general, the fluorinated side induces metallic properties in a large number of functionalized silicenes. In some cases which presented band gaps as large as 3.2 eV when isolated, the deposition over fluorinated silicene was able to close that gap and induce a metallic character. In addition to this, in four cases small gaps in the range of 0.1-0.6 eV were obtained for bilayer silicenes. Therefore, functionalization of silicene is a powerful method to produce stable two-dimensional silicon based nanomaterials with tunable optical band gaps.
机译:在这里,我们采用第一原理密度泛函周期性计算来表征石墨烯的硅对应物:硅烯。我们发现硅烯比石墨烯具有更高的反应性,可以形成非常稳定且牢固的Si-X键,其中X = H,CH3,OH和F。Si-F键是最强的键,结合能为114.9 kcal mol(-1)。当自由基团聚时,每个功能的结合能增长到17 kcal mol(-1)。由于存在层内氢键,用OH自由基进行的官能化产生最大的硅结构改变。将H,CH3,OH和F共价添加到硅中可以调节其电子结构。实际上,当自由基的类型和浓度变化时,官能化的硅烯可以是半导体,甚至具有金属性能。鉴于带隙相对于对称和不对称(Janus)官能化单层硅酮计算的带隙显着降低,当堆叠两层官能化硅酮时获得了最有趣的结果。在氟的情况下,当硅的至少一侧被完全氟化时,双层硅的电子结构的最大变化被意识到。通常,氟化侧在大量官能化的聚硅氧烷中诱导金属性质。在某些情况下,当隔离时带隙高达3.2 eV,在氟化硅上的沉积能够缩小该带隙并产生金属特性。除此之外,在四种情况下,双层有机硅都获得了0.1-0.6 eV的小间隙。因此,硅的官能化是产生具有可调光学带隙的稳定的二维硅基纳米材料的有力方法。

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