Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga_2S_3 nanocrystals

摘要

Upon 808 nm excitation, an intense broadband near-infrared emission from Cr~(4+) has been observed in 80GeS_2-20Ga_2S_3 chalcogenide glass-ceramics (GCs) containing Ga_2S_3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga_2S_3 nanocrystals (～20 nm) increases the emission intensity of Cr~(4+) by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.