On-chip parametric amplification with 26.5 dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

摘要

We present what we believe to be the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5 dB at telecom wavelength is reported. Measured nonlinear parameter is 770 W~(-1) m~(-1), nonlinear absorption 28 W~(-1) m~(-1), bandgap 1.61 eV.