InGaAs/InP avalanche photodiode for infrared single photon detection using a time-to-voltage converter

摘要

We demonstrated an efficient and robust technique for weak avalanche discrimination by using a time-to-voltage converter circuit for the infrared single photon detection based on InGaAs/InP single photon avalanche photodiodes (SPADs), which enabled a strong suppression of the afterpulse noise. At a gating frequency of 10 MHz, a detection efficiency of 20.1% was obtained with a dark count probability of 1.2 × 10~(-5) and an afterpulse probability of 1.22% without dead time, paving the way for the low-noise fast detection of infrared single photons.