Effects of 160 keV electron irradiation on the optical properties and microstructure of 'Panda' type Polarization-Maintaining optical fibers

摘要

In this paper, effects of 160 keV electron irradiated "Panda" type Polarization-Maintaining optical fiber at 1310 nm are investigated by us. Attenuation coefficient induced in optical fiber by electron beams at 1310 nm increases with increase in electron fluence. Electron irradiation-induced damage mechanism are studied by means of CASINO simulation program, the X-ray photoelectron spectroscopy (XPS), electron spin resonance spectrometer (EPR) and Fourier transform infrared spectroscopy (FTIR). The results show that Si-OH impurity defect concentration is the main reason of increasing attenuation coefficient at 1310 nm.