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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Dip-Coating Deposition on Chemically Patterned Surfaces: A Mechanistic Analysis and Comparison with Topographically Patterned Surfaces
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Dip-Coating Deposition on Chemically Patterned Surfaces: A Mechanistic Analysis and Comparison with Topographically Patterned Surfaces

机译:化学图案化表面上的浸涂沉积:机理分析和与地形图案化表面的比较

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Chemically patterned surfaces containing hydrophilic features on a hydrophobic background have been used by a number of groups to deposit arrays of particles/crystals/ substances by dip-coating deposition. In this technique, a substrate is simply withdrawn from a solution (or dispersion) of the desired substance, the solution dewets from the hydrophobic region and wets the hydrophilic features, and the particles/ crystals/substances deposit on the hydrophilic features after solvent evaporation. An apparently similar approach, recently described by several groups, involves dip-coating deposition of substances from solutions onto hydrophobic topographic features (arrays of posts on superhydrophobic surfaces) that are separated by air. We report results of dip-coating deposition using chemically patterned surfaces and compare them directly with results from post-containing superhydrophobic surfaces. This comparison involves the analysis of events at receding three-phase contact lines; these events differ significantly in the two approaches with the key difference being tensile (normal to the surface) versus sessile (parallel to the surface) capillary bridge failure. Tensile failure occurs with the post-containing superhydrophobic surfaces and sessile failure with chemically patterned surfaces. The solvent evaporation stages of the processes, that occur subsequent to the capillary bridge failure events, also vary significantly in the two approaches and depend on the receding contact angles of the hydrophobic post tops and the hydrophilic chemically patterned features. These differences, as the adjectives suggest, are pronounced. Controlling the evaporation rate (adjusting the vaporization/condensation equilibrium) by raising the partial pressure of the solvent is identified as a useful variable for chemically patterned surfaces.
机译:许多小组已经使用在疏水性背景上包含亲水特征的化学图案化表面通过浸涂沉积来沉积颗粒/晶体/物质的阵列。在该技术中,简单地从所需物质的溶液(或分散液)中取出基材,该溶液从疏水区域浸润并润湿亲水性特征,并且在溶剂蒸发后,颗粒/晶体/物质沉积在亲水性特征上。最近由几个小组描述的一种显然相似的方法涉及将溶液中的物质浸涂沉积到被空气隔开的疏水形貌特征(超疏水表面上的柱阵列)上。我们报告了使用化学构图表面进行浸涂沉积的结果,并将其与含后超疏水表面的结果直接进行比较。这种比较包括分析三相接触线后退时的事件。这些事件在两种方法中有显着不同,主要区别是拉伸(垂直于表面)与无柄(平行于表面)毛细管桥破坏。含柱后的超疏水性表面发生拉伸破坏,而化学构图的表面则发生固着破坏。在毛细管桥失效事件之后发生的过程的溶剂蒸发阶段,在两种方法中也有很大不同,并且取决于疏水柱顶部的后退接触角和亲水化学图案化的特征。正如形容词所暗示的,这些差异是明显的。通过提高溶剂的分压来控制蒸发速率(调节蒸发/冷凝平衡)被认为是化学构图表面的有用变量。

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