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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Synthesis of Stable Mesostructured Coupled Semiconductor Thin Films:meso-CdS-TiO_2 and meso-CdSe-TiO_2
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Synthesis of Stable Mesostructured Coupled Semiconductor Thin Films:meso-CdS-TiO_2 and meso-CdSe-TiO_2

机译:稳定介观耦合半导体薄膜的制备:介观CdS-TiO_2和介观CdSe-TiO_2

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Cd(II) ions can be incorporated into the channels of mesostructured titania films, using the evaporation-induced selfassembly (EISA) approach, up to a record high Cd/Ti mole ratio of 25%. The film samples were obtained by spin or dip coating from a mixture of 1-butanol, [Cd(H_2O)_4](NO_3)_2,HNO_3, and Ti(OC_4H_9)4 and then aging the samples under 50% humidity at 30 ℃(denoted as meso-xCd(II)-yTiO_2). The nitrate ions, from nitric acid and cadmium nitrate, play important roles in the assembly process by coordinating as bidentate and bridged ligands to Cd(II) and Ti(IV) sites, respectively, in the mesostructured titania films. The film samples can be reacted under a H_2S (orH_2Se) gas atmosphere to produce CdS (or CdSe) on the channel surface and/or pore walls. However, the presence of such a large number of nitrate ions in the film samples also yields an extensive amount of nitric acid upon H_2S (or H_2Se) reaction, where the nanoparticles are not stable (they undergo decomposition back to metal ion and H_2S or H_2Se gas). However, this problem can be overcome by further aging the samples at 130 ℃ for a few hours beforeH2S (orH_2Se) reaction. This step removes about 90% of the nitrate ions, eliminates the nitric acid production step, and stabilizes the CdS nanoparticles on the surface and/or walls of the pores of the coupled semiconductor films, denoted as meso-xCdS-yTiO_2. However, the H_2Se reaction, additionally, needs to be carried at lower H_2Se pressures in an N_2 atmosphere to produce stable CdSe nanoparticles on the surface and/or walls of the pores of the films, denoted as meso-xCdSe-yTiO_2. Otherwise, an excessive number of Se_8 particles form in the film samples.
机译:可以使用蒸发诱导自组装(EISA)方法将Cd(II)离子掺入介孔结构的二氧化钛薄膜的通道中,使Cd / Ti摩尔比达到创纪录的25%。薄膜样品是通过旋涂或浸涂从1-丁醇,[Cd(H_2O)_4](NO_3)_2,HNO_3和Ti(OC_4H_9)4的混合物中,然后在30℃50%的湿度下老化而制成的。 (表示为内消旋-xCd(II)-yTiO_2)。来自硝酸和硝酸镉的硝酸根离子,在介孔结构中起着重要作用,它们分别作为中齿二氧化钛薄膜中的二齿和桥联配体分别与Cd(II)和Ti(IV)位点配合。膜样品可以在H_2S(或H_2Se)气体气氛下反应,在通道表面和/或孔壁上产生CdS(或CdSe)。但是,膜样品中大量硝酸根离子的存在也会在H_2S(或H_2Se)反应时产生大量硝酸,其中纳米颗粒不稳定(它们会分解回金属离子和H_2S或H_2Se加油站)。但是,可以通过在H2S(或H_2Se)反应之前将样品在130℃下进一步老化几个小时来克服此问题。该步骤除去了约90%的硝酸根离子,消除了硝酸产生步骤,并使CdS纳米颗粒稳定在偶联的半导体膜的孔的表面和/或孔的壁和/或壁上,称为介观xCdS-yTiO_2。然而,另外,需要在较低的H_2Se压力下在N_2气氛中进行H_2Se反应,以在膜的孔的表面和/或壁上产生稳定的CdSe纳米颗粒,称为中观xCdSe-yTiO_2。否则,膜样品中会形成过多的Se_8颗粒。

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