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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Photocurrent Generation in Heterostructured Ultrathin Films Fabricated by Layer-by-Layer Deposition of Polyelectrolytes Bearing Tris(2,2'-bipyridine)ruthenium(II) and Ferrocene Moieties
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Photocurrent Generation in Heterostructured Ultrathin Films Fabricated by Layer-by-Layer Deposition of Polyelectrolytes Bearing Tris(2,2'-bipyridine)ruthenium(II) and Ferrocene Moieties

机译:层状沉积三(2,2'-联吡啶)钌(II)和二茂铁部分的聚电解质制备的异质结构超薄膜中的光电流产生

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摘要

The photoelectrochemical properties of single-component and heterostructured layer-by-layer deposited films bearing tris(2,2'-bipyridine)ruthenium(II) (Ru) moieties were investigated by photocurrent measurements in solutions in the presence of sacrificial reagents.The photocurrent increased with an increase in the thickness of the films and then had a maximum at a thickness of 10 nm.This increase demonstrates a light-harvesting effect based on excitation energy migration among the Ru moieties to the film/electrolyte interface.A cathodic photocurrent was observed for a heterostructured film where bilayers bearing ferrocene (Fc) moieties and bilayers bearing Ru moieties were deposited on an indium tin oxide (ITO) substrate in the order (ITO/Fc/Ru).On the other hand,an anodic photocurrent was observed for the reverse order film (ITO/Ru/Fc).These results show that the direction of the photocurrent is determined by the gradient of the redox potentials formed in the heterostructured films.The internal quantum efficiency for the ITO/ Ru/Fc film was twice that for the single-component film (ITO/Ru).This enhancement of the quantum efficiency is due to suppression of charge recombination by successive electron transfers in the heterostructured film.
机译:在牺牲试剂存在下,通过溶液中的光电流测量研究了带有三(2,2'-联吡啶)钌(II)(Ru)部分的单组分和异质结构逐层沉积膜的光电化学性质。随膜厚度的增加而增加,然后在10 nm处达到最大值,这种增加表明了基于Ru基团之间的激发能迁移到膜/电解质界面的光聚集效应。观察到异结构膜,其中二茂铁(Fc)部分的双层和Ru组分的双层依次(ITO / Fc / Ru)沉积在铟锡氧化物(ITO)基板上。另一方面,观察到阳极光电流这些结果表明,光电流的方向取决于异质结构膜中形成的氧化还原电势的梯度。 ITO / Ru / Fc膜的内部量子效率是单组分膜(ITO / Ru)的两倍。量子效率的这种提高是由于异质结构膜中连续的电子转移抑制了电荷复合。

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