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A simple criterion for determining the static friction force between nanowires and flat substrates using the most-bent-state method

机译:使用最弯曲状态法确定纳米线与平坦基板之间静摩擦力的简单准则

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摘要

A simple criterion was developed to assess the appropriateness of the currently available models that estimate the static friction force between nanowires and substrates using the 'most-bentstate' method. Our experimental testing of the static friction force between Al2O3 nanowires and Si substrate verified our theoretical analysis, as well as the establishment of the criterion. It was found that the models are valid only for the bent nanowires with the ratio of wire length over the minimum curvature radius (L/RO) no greater than 1. For the cases with L/RO greater than 1, the static friction force was overestimated as it neglected the effect of its tangential component.
机译:开发了一个简单的标准来评估当前可用模型的适用性,该模型使用“最弯曲状态”方法估算纳米线与基材之间的静摩擦力。我们对Al2O3纳米线与Si衬底之间的静摩擦力的实验测试证明了我们的理论分析以及标准的建立。发现该模型仅对弯曲的纳米线有效,线长度与最小曲率半径(L / RO)之比不大于1。对于L / RO大于1的情况,静摩擦力为由于它忽略了切向分量的影响而被高估了。

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