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Efficient white light emitting diodes based on Cu-doped ZnInS/ZnS core/shell quantum dots

机译:基于掺杂铜的ZnInS / ZnS核/壳量子点的高效白光发光二极管

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We report the fabrication of efficient white light-emitting diodes (WLEDs) based on Cu: ZnInS/ ZnS core/shell quantum dots (QDs) with super large Stokes shifts. The composition-controllable Cu: ZnInS/ZnS QDs with a tunable emission from deep red to green were prepared by a one-pot noninjection synthetic approach. The high performance Cu: ZnInS QD-WLEDs with the colour rendering index up to 96, luminous efficacy of 70–78 lmW~(?1), and colour temperature of 3800–5760 K were successfully fabricated by integration of red and green Cu-doped QDs. Negligible energy transfer between Cu-doped QDs was clearly found by measuring the photoluminescence lifetimes of the QDs, consistent with the small spectral overlap between QD emission and absorption. The experimental results indicated low toxic Cu: ZnInS/ZnS QDs could be suitable for solid state lighting.
机译:我们报告基于铜的高效白光发光二极管(WLED)的制造:具有超大斯托克斯位移的ZnInS / ZnS核/壳量子点(QDs)。通过一锅法非注入合成方法制备了可控制组成的,可控制发射的深红色至绿色的Cu:ZnInS / ZnS QD。通过将红色和绿色Cu-集成,成功制造了显色指数高达96,发光效率70-78 lmW〜(?1)和色温3800-5760 K的高性能Cu:ZnInS QD-WLED。掺杂的量子点。通过测量QD的光致发光寿命,可以清楚地发现掺杂Cu的QD之间的能量转移微不足道,这与QD发射和吸收之间的小光谱重叠相一致。实验结果表明,低毒的Cu:ZnInS / ZnS QDs可能适合固态照明。

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