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An investigation into the fabrication and combustion performance of porous silicon nanoenergetic array chips

机译:多孔硅纳米高能阵列芯片的制备及燃烧性能研究

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摘要

An investigation into the ignitions and combustions of porous silicon(PS) nanoenergetic material array chips(nECs) at different ignition voltages was performed. The PS nECs were fabricated by integrating PS nanoenergetic material(nEMs) matrices and Cr-microbridges(microigniters) on the surface of silicon substrates. The combustion of PS nECs was in ambient air. Its ignition and combustion were investigated by a testing system and an optical high-speed camera. Experimental results revealed that the combustion delay time of PS nEMs increased from 8.0×10 ~5s to 1.1×10 ~4s with the decrement of ignition voltages from 140 to 80V. The scope of ignition energy ranged from 0.153 to 0.287mJ by calculations. The reaction type was deflagration, from the analysis of the high-speed video of PS nECs. The comprehensive experimental results indicated that the combustion of PS nECs was ignited by the synergic effect of the heat and the plasma. The ignition experiments suggested that Cr-microbridges were reliable igniters to trigger the self-sustained combustion of PS nECs. The strong plume of flame emitted from the surface of PS nECs indicated that the PS nECs may be applied as microano igniter chips and microthruster chips.
机译:对多孔硅(PS)纳米高能材料阵列芯片(nECs)在不同点火电压下的点火和燃烧进行了研究。 PS nEC是通过将PS纳米高能材料(nEMs)基质和Cr微桥(微点火剂)集成在硅衬底表面上而制成的。 PS nECs在环境空气中燃烧。通过测试系统和光学高速相机对它的着火和燃烧进行了研究。实验结果表明,随着点火电压从140V降低到80V,PS nEMs的燃烧延迟时间从8.0×10〜5s增加到1.1×10〜4s。经计算,点火能量范围为0.153至0.287mJ。根据PS nEC的高速视频分析,反应类型为爆燃。综合实验结果表明,PS nECs的燃烧被热量和等离子体的协同作用所点燃。点火实验表明,铬微桥是触发PS nECs持续燃烧的可靠点火器。 PS nEC表面散发出的强烈火焰表明,PS nEC可以用作微型/纳米点火器芯片和微型推进器芯片。

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