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High quantum-yield CdSe_xS_(1-x)/ZnS core/shell quantum dots for warm white light-emitting diodes with good color rendering

机译:高量子产率CdSe_xS_(1-x)/ ZnS核/壳量子点,用于暖白色发光二极管,具有良好的显色性

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摘要

Composition-controllable ternary CdSe_xS_(1-x) quantum dots (QDs) with multiple emission colors were obtained via a hot-injection-like method at a relatively low injection temperature (230 ° C) in octadecene. Then highly fluorescent CdSe_xS_(1-x)/ZnS core/shell (CS) QDs were synthesized by a facile single-molecular precursor approach. The fluorescent quantum yield of the resulting green (λ_(em) = 523 nm), yellow (λ_(em) = 565 nm) and red (λ_(em) = 621 nm) emission of CS QDs in toluene reached up to 85%, 55% and 39%, respectively. Moreover, a QDs white light-emitting diode (QDs-WLED) was fabricated by hybridizing green-, yellow- and red-emitting CdSe _xS_(1-x)/ZnS CS QDs/epoxy composites on a blue InGaN chip. The resulting four-band RYGB QDs-WLED showed good performance with CIE-1931 coordinates of (0.4137, 0.3955), an R_a of 81, and a T_c of 3360 K at 30 mA, which indicated the combination of multiple-color QDs with high fluorescence QYs in LEDs as a promising approach to obtain warm WLEDs with good color rendering.
机译:通过类似热注入的方法,在相对较低的注入温度(230°C)下,在十八碳烯中获得具有多种发射颜色的成分可控制的三元CdSe_xS_(1-x)量子点(QDs)。然后,通过简便的单分子前体方法合成了高荧光CdSe_xS_(1-x)/ ZnS核/壳(CS)QD。甲苯中CS QD的绿色(λ_(em)= 523 nm),黄色(λ_(em)= 565 nm)和红色(λ_(em)= 621 nm)发射的荧光量子产率达到85% ,55%和39%。此外,通过将发射绿色,黄色和红色的CdSe _xS_(1-x)/ ZnS CS QDs /环氧树脂复合材料在蓝色InGaN芯片上混合,制造了QDs白色发光二极管(QDs-WLED)。所得的四波段RYGB QDs-WLED在30 mA下的CIE-1931坐标为(0.4137,0.3955),R_a为81,T_c为3360 K时表现出良好的性能,这表明多色QD具有较高的色度组合LED中的荧光QY是获得具有良好显色性的暖色WLED的有前途的方法。

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