首页> 外文期刊>Nanotechnology >Simulation of ionic current through the nanopore in a double-layered semiconductor membrane
【24h】

Simulation of ionic current through the nanopore in a double-layered semiconductor membrane

机译:双层半导体膜中通过纳米孔的离子电流的模拟

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

We study the effects of different nanopore geometries (double-conical, single-conical, cylindrical) on the electrostatic potential distribution and ionic conductivity in a double-layered semiconductor nanopore device as functions of the applied membrane bias. Ionic current-voltage characteristics as well as their rectification ratios are calculated using a simple ion transport model. Based on our calculations, we find that the double-layered semiconductor membrane with a single-conical nanopore with a narrow opening in the n-Si layer exhibits the largest range of available potential variations in the pore and, thus, may be better suited for control of polymer translocation through the nanopore.
机译:我们研究了不同的纳米孔几何形状(双圆锥形,单圆锥形,圆柱形)对双层半导体纳米孔器件中的静电势分布和离子电导率的影响,该效应是所施加的膜偏压的函数。使用简单的离子迁移模型计算离子电流-电压特性及其整流比。根据我们的计算,我们发现在n-Si层中具有单锥纳米孔且开口狭窄的双层半导体膜在孔中显示出最大的可用电势变化范围,因此可能更适合于控制聚合物通过纳米孔的移位。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号