Broadband (22-40 GHz) multistage MMIC low-noise amplifier

摘要

In this article, a wideband (22-40 GHz) four-stage monolithic microwave integrated circuit low noise amplifier has been presented, which was fabricated in WIN 0.15 um pseudomorphic high electron-mobility transistor technology. The source inductor and interstage mismatching methods were used to realize both low noise and flatten gain simultaneously in wideband. The designed LNA has achieved a gain of 22 +/- 1 dB and a noise figure of less than 3 dB from 22 to 40 GHz. The chip size was 2 x 1 mm(2), which can be used in active phased-array receiver modules, millimeter wave imaging, broadband wireless communication systems, and 24-GHz short-range sensors. In addition the LNA was worked with only one supply power, which was realized by four self -bias resistances. (c) 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:956-959, 2016