首页> 外文期刊>Microwave and optical technology letters >A 75-85 GHz DOWN-CONVERSION MIXER WITH INTEGRATED MARCHAND BALUNS IN 90 nm CMOS WITH EXCELLENT MATCHING AND PORT-TO-PORT ISOLATION FOR AUTOMOTIVE RADARS
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A 75-85 GHz DOWN-CONVERSION MIXER WITH INTEGRATED MARCHAND BALUNS IN 90 nm CMOS WITH EXCELLENT MATCHING AND PORT-TO-PORT ISOLATION FOR AUTOMOTIVE RADARS

机译:75-85 GHz下变频混频器,在90 nm CMOS中具有集成的Marlan Balun,具有出色的匹配和端口对端口隔离,可满足汽车雷达的要求

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A 75-85 GHz double-balanced down-conversion mixer for automotive radars using standard 90 nm CMOS technology is reported. The down-conversion mixer comprises a double-balanced Gilbert cell with inductive source-degeneration RF transconductance stage for RF-port input matching bandwidth and conversion gain (CG) enhancement, a Marchand balun for converting the single RF input signal to differential signal, a Marchand balun for converting the single LO input signal to differential signal, and a baseband amplifier. The mixer consumes 13 mW and achieves excellent RF-port input reflection coefficient of -13.1 to -19.4 dB and LO-port input reflection coefficient of -9.1 to -11.8 dB for frequencies of 75-85 GHz. In addition, for frequencies of 75-85 GHz, the mixer achieves CG of -1 to 1.5 dB, LO-RF isolation of 43.5-49.2 dB, LO-IF isolation of 56.5-64.5 dB and RF-IF isolation of 35.9-39.4 dB, one of the best CG and port-to-port isolation results ever reported for a CMOS down-conversion mixer with operation frequency around 80 GHz. Furthermore, the mixer achieves an excellent input third-order intercept point of 2.7 dBm at 79 GHz. These results demonstrate the proposed down-conversion mixer architecture is promising for W-band transceivers. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:73-80, 2015
机译:据报道,采用标准90 nm CMOS技术的用于汽车雷达的75-85 GHz双平衡下变频混频器。下变频混频器包括一个双平衡吉尔伯特单元,该单元具有用于射频端口输入匹配带宽和转换增益(CG)增强的电感性源极-退化射频跨导级,用于将单个RF输入信号转换为差分信号的Marchand balun, Marchand balun用于将单个LO输入信号转换为差分信号,以及一个基带放大器。该混频器功耗为13 mW,对于75-85 GHz的频率,其出色的RF端口输入反射系数为-13.1至-19.4 dB,LO端口输入反射系数为-9.1至-11.8 dB。此外,对于75-85 GHz的频率,混频器的CG为-1至1.5 dB,LO-RF隔离度为43.5-49.2 dB,LO-IF隔离度为56.5-64.5 dB,RF-IF隔离度为35.9-39.4 dB,是工作频率在80 GHz左右的CMOS下变频混频器有史以来最好的CG和端口到端口隔离结果之一。此外,该混频器在79 GHz时可实现2.7 dBm的出色输入三阶交调截点。这些结果表明,所提出的下变频混频器架构对于W波段收发器很有希望。 (c)2015年,Wiley Periodicals,Inc.微波Opt Technol Lett 57:73-80,2015年

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