A W-BAND POWER DETECTOR RFIC DESIGN IN 0.13 mu m SIGE BiCMOS PROCESS

摘要

This article presents the results of a wideband power detector radio frequency integrated circuit design intended for W-band passive imaging sensors. The power detector was fabricated in a 0.13 mu m SiGe BiCMOS process technology with 300 GHz/500 GHz f(T)/f(max). The experimental results show broadband RF properties such as a responsivity of 40-60 kV/W and a noise equivalent power (NEP) of 0.3-0.4 pW/Hz(1/2) at 70-95 GHz, respectively (the DC power consumption is 225 mu W). To the authors' best knowledge, the SiGe detector design reports the widest s(11) -10 dB bandwidth (s(11)-10 dB at 79-102 GHz) among silicon based W-band power detectors and is competitive with InP-based W-band detectors in terms of a higher responsivity and similar NEP. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:414-417, 2015