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Surface characteristics and photoelectrocatalytic capabilities of nanoporous titanium dioxide/tin indium oxide composite thin film electrodes

机译:纳米多孔二氧化钛/锡铟氧化物复合薄膜电极的表面特性和光电催化能力

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This study applied a prolonged DC magnetron sputtering technique to prepare two nanoporous columnar and well-crystallized titanium dioxide/tin indium oxide (TiO_2/ITO) composite thin film electrodes for photoelectrocatalytic reactions. The visible light enabled TiO_2/ITO electrode was obtained by carbon doping while sputtering thin-film TiO_2 onto the proposed ITO substrate. Both photoelectrocatalytic hydrogen generation and dimethyl sulfoxides (DMSO) degradation experiments were conducted for evaluating the photoelectrocatalytic capabilities of the prepared samples. The contribution of ITO co-doping on photocatalytic activities of hetero-structured photocatalysts was investigated in the study. The experimental results show both samples primarily in anatase TiO_2 crystallization phase. Due to a higher sputtering power is applied for carbon-doped TiO_2/ITO (CTI) film preparation, the tin ions of ITO permeate into TiO_2 film to form a crystalline Ti_(1-x)Sn_xO_2 interfacial layer, which results in CTI film with a higher photocatalytic oxidation rate of than the simple TiO_2/ITO (STI). The dimethyl sulfoxides (DMSO) degradation rate by CTI is about 2.83-fold higher than by STI. Conversely, the STI, prepared at a lower sputtering power, produced much higher photocurrent density (~230 μA cm~(-2)) and hydrogen yield rate (~15.67 μmol cm~(-2) h~(-1)) than the CTI owing to forming a higher Schottky barrier at the TiO_2/ITO interface of STI film. These findings suggest that the interfacial characteristics of the TiO_2/ITO film importantly affect their photocatalytic activities. This study also demonstrates that the prolonged DC magnetron sputtering technique can be applied to prepare thin-film photocatalysts with selective application purposes if suitable sputtering conditions can be carefully selected.
机译:本研究采用延长的直流磁控溅射技术,制备了两个纳米多孔的柱状且结晶良好的二氧化钛/氧化铟锡(TiO_2 / ITO)复合薄膜电极,用于光电催化反应。通过碳掺杂同时将薄膜TiO_2溅射到所建议的ITO基板上,获得了具有可见光的TiO_2 / ITO电极。进行了光电催化产氢和二甲基亚砜(DMSO)降解实验,以评估所制备样品的光电催化能力。研究了ITO共掺杂对异结构光催化剂光催化活性的贡献。实验结果表明,两种样品均主要处于锐钛矿型TiO_2结晶阶段。由于更高的溅射功率被用于碳掺杂的TiO_2 / ITO(CTI)膜的制备,ITO的锡离子渗透到TiO_2膜中形成结晶Ti_(1-x)Sn_xO_2界面层,从而导致CTI膜具有比简单的TiO_2 / ITO(STI)更高的光催化氧化速率。 CTI的二甲基亚砜(DMSO)降解速率比STI高约2.83倍。相反,以较低的溅射功率制备的STI产生的光电流密度(〜230μAcm〜(-2))和氢气产率(〜15.67μmolcm〜(-2)h〜(-1))更高。由于在STI膜的TiO_2 / ITO界面上形成了更高的肖特基势垒,所以CTI值较高。这些发现表明,TiO_2 / ITO膜的界面特性对它们的光催化活性有重要影响。这项研究还表明,如果可以仔细选择合适的溅射条件,则可以采用延长的直流磁控溅射技术来制备具有选择性应用目的的薄膜光催化剂。

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