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Structure, bonding and physical properties of tetragonal and orthorhombic SiS2 from (hybrid) DFT calculations

机译:通过(混合)DFT计算得出四方和正交SiS2的结构,键合和物理性质

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The energetics, structure and physical properties of tetragonal and orthorhombic SiS2 were Calculated by periodic density functional theory (DFT) Calculations, using both localized orbital and projected augmented wave basis-sets. All methods applied agree upon the relative energies of the different polymorphs but show differences in the predicted geometries, which are minimized upon improving the basis-set quality. The hybrid PBEO functional Was found to give the best match between experimental and calculated structures. When comparing SiS2 With its much better Studied oxide analog silica, we observe that upon substituting sulphur for oxygen, the energy landscape changes dramatically. Other effects of changing S for O are found to be smaller Si-X-Si angles, a broader distribution of X-Si-X angles, a more flexible framework and a significantly reduced band gap. The latter is in line with the experimental observation of photoluminescence in related GaGeS2 compounds and suggests that SiS2 might find application in UV light emitting diodes. Finally, a comparison of the maximally localized Wannier functions demonstrates that the Si-S bonds ill SiS2 have a considerably more covalent character than the Si-O bonds in silica. (C) 2008 Elsevier Inc. All Fights reserved.
机译:通过周期性密度泛函理论(DFT)计算,使用局部轨道和投影增强波基集,计算出四方和正交SiS2的能量,结构和物理性质。所应用的所有方法都同意不同多晶型物的相对能量,但是在预测的几何形状中显示出差异,在改善基本设置质量时将其最小化。发现混合的PBEO功能在实验结构和计算结构之间提供了最佳匹配。当将SiS2与更好的研究型氧化物类似物二氧化硅进行比较时,我们观察到用硫代替氧后,能量格局发生了巨大变化。发现将S更改为O的其他影响是较小的Si-X-Si角度,较宽的X-Si-X角度分布,更灵活的框架以及显着减小的带隙。后者与相关GaGeS2化合物中的光致发光的实验观察一致,并表明SiS2可能会在紫外线发光二极管中找到应用。最后,对最大局部Wannier函数的比较表明,SiS2中的Si-S键比二氧化硅中的Si-O键具有更大的共价特征。 (C)2008 Elsevier Inc.版权所有。

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