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Positively and negatively large Goos-Hanchen lateral displacements from a single negative layered structure

机译:来自单个负层结构的正负Goos-Hanchen横向位移

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We study the electromagnetic beam reflection from layered structures that include the so-called ε-negative and the μ-negative materials, also called single negative materials. We predict that such structures can demonstrate a giant lateral Goos-Hanchen shift of the resonant excitation of surface waves at the interface between the conventional and single negative materials, as well as due to the excitation of leaky modes in the layered structures. Then we replace the conventional layer with a left-handed layer (a material with both ε < 0 and μ < 0). We show that the Goos-Hanchen shift can be positive and negative depending on the type of this layer (conventional or LH material), which can support TE or TM surface waves.
机译:我们研究了分层结构的电磁束反射,这些结构包括所谓的ε负材料和μ负材料,也称为单负材料。我们预测,这样的结构可以显示出在传统材料和单一负材料之间的界面处表面波的共振激发的巨大横向Goos-Hanchen位移,以及由于激发了分层结构中的泄漏模。然后,我们用左手层(ε<0和μ<0的材料)替换常规层。我们表明,取决于该层的类型(常规或LH材料),Goos-Hanchen位移可以为正和负,可以支持TE或TM表面波。

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