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Bradbury-Nielsen-Gate-Grid Structure for Further Enhancing the Resolution of Ion Mobility Spectrometry

机译:Bradbury-Nielsen-Gate-Grid结构可进一步提高离子迁移谱的分辨率

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摘要

In our previous work we proposed a three-zone theory for the Bradbury-Nielsen (BN) gate and proved with a grid-BN structure ion mobility drift tube that enhancements of the three-zone features led to higher resolutions and sometimes higher sensitivities. In this work we continued to seek further improvements of the resolution performance by adopting a BN-grid structure in the same drift tube. The postgate grid works both for confinement of the BN gate induced electric field and for isolation of the injection field from the drift field. This makes it possible to obtain better resolutions by further enhancing the compression electric field and lowering the injection field. It was found in the following experiments that reducing the injection field led to higher resolutions yet lower sensitivities. At an injection field of 140 V/cm, the inverse compression coefficient was found to be much larger than that in the grid-BN structure at all gating voltage differences (GVDs). At GVD velence 350 V and a gate pulse width of 0.34 ms, the ion mobility spectrometry efficiency R_(m)/R_(c) reached as high as 221percent in the BN-grid structure, presenting a further increase compared to 182percent in the grid-BN structure. Finally, two examples are given to show the separation power improvements with good resolutions.
机译:在我们之前的工作中,我们为Bradbury-Nielsen(BN)门提出了一个三区域理论,并用grid-BN结构离子迁移率漂移管进行了证明,该三区域特征的增强导致更高的分辨率,有时甚至更高的灵敏度。在这项工作中,我们继续寻求通过在同一漂移管中采用BN网格结构来进一步提高分辨率的性能。后栅栅极既可用于限制BN栅感应电场,又可用于将注入场与漂移场隔离。通过进一步增强压缩电场并降低注入场,这可以获得更好的分辨率。在以下实验中发现减小注入场会导致较高的分辨率,但灵敏度较低。在140 V / cm的注入场下,发现在所有门控电压差(GVDs)下,逆压缩系数都比grid-BN结构大。在GVD速度350 V和栅极脉冲宽度为0.34 ms的情况下,BN网格结构中的离子迁移谱效率R_(m)/ R_(c)高达221%,与网格中的182%相比,进一步提高-BN结构。最后,给出了两个示例,以显示具有良好分辨率的分离能力的提高。

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