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Theoretical Analysis of Microscopic Ohmic Drop Effects on Steady-State and Transient Voltammetry at the Disk Microelectrode: A Quasi-Conformal Mapping Modeling and Simulation

机译:磁盘微电极上稳态和瞬态伏安法微观欧姆滴效应的理论分析:准保形映射建模与仿真

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摘要

The effect of uncompensated solution resistance on steady-state and transient voltammograms at the disk microelectrode was for the first time treated theoretically and numerically at the microscopic level using specific quasi-conformal mapping for the case of absence of electric migration. It has been shown that microscopic distributions of electric potential and current density at a disk microelectrode affect the voltammetric waves at different degrees across the electrode surface due to the variation of elementary resistances and elementary current fluxes over the electrode surface which leads to nonlinear effects that have not been discussed in existing theoretical treatments of ohmic drop at microelectrodes. The analysis of steady state voltammetry in strongly resistive media under Nernstian conditions has allowed justification by appropriate analytical derivations of the widely used potential-shift correction of steady state voltammograms by plotting i vs (E - iR_(e)).
机译:对于不存在电迁移的情况,首次使用特定的准保形映射在微观水平上从理论上和数值上首次处理了盘微电极上未补偿的溶液电阻对稳态和瞬态伏安图的影响。已经表明,由于电极表面上的基本电阻和基本电流通量的变化,导致圆盘形微电极上电位和电流密度的微观分布以不同程度影响电极表面上的伏安波,从而导致非线性效应。在现有的微电极上的欧姆降的理论处理中没有讨论。通过在Nernstian条件下对强电阻介质中的稳态伏安法进行分析,可以通过对i vs(E-iR_(e))作图,对广泛使用的稳态伏安图电位漂移校正进行适当的分析推导,从而证明其合理性。

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