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Tailoring Nucleation at Two Interfaces Enables Single Crystalline NiO Nanowires via Vapor Liquid Solid Route

机译:通过两个界面定制成核,可通过蒸气液体固相路线实现单晶NiO纳米线

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Here we show a rational strategy to fabricate single crystalline NiO nanowires via a vapor liquid solid (VLS) route, which essentially allows us to tailor the diameter and the spatial position. Our strategy is based on the suppression of the nucleation at vapor solid (VS) interface, which promotes nucleation only at the liquid solid (LS) interface. Manipulating both the supplied material fluxes (oxygen and metal) and the growth temperature enables enhancement of the nucleation only at the LS interface. Furthermore, this strategy allows us to reduce the growth temperature of single crystalline NiO nanowires down to 550 degrees C, which is the lowest growth temperature so far reported.
机译:在这里,我们展示了一种通过汽液固相(VLS)路线制造单晶NiO纳米线的合理策略,这实质上使我们能够定制直径和空间位置。我们的策略基于抑制气固(VS)界面处的成核,这仅促进了液固(LS)界面处的成核。通过控制所提供的材料通量(氧气和金属)和生长温度,可以仅在LS界面处增强成核作用。此外,这种策略允许我们将单晶NiO纳米线的生长温度降低到550摄氏度,这是迄今为止报道的最低的生长温度。

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