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Optical Input/Electrical Output Memory Elements based on a Liquid Crystalline Azobenzene Polymer

机译:基于液晶偶氮苯聚合物的光学输入/电子输出存储元件

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摘要

Responsive polymer materials can change their properties when subjected to external stimuli. In this work, thin films of thermotropic poly(metha)acrylate/azobenzene polymers are explored as active layer in light-programmable, electrically readable memories. The memory effect is based on the reversible modifications of the film morphology induced by the photoisomerization of azobenzene mesogenic groups. When the film is in the liquid crystalline phase, the trans ? cis isomerization induces a major surface reorganization on the mesoscopic scale that is characterized by a reduction in the effective thickness of the film. The film conductivity is measured in vertical two-terminal devices in which the polymer is sandwiched between a Au contact and a liquid compliant E-GaIn drop. We demonstrate that the trans ? cis isomerization is accompanied by a reversible 100-fold change in the film conductance. In this way, the device can be set in a high- or low-resistance state by light irradiation at different wavelengths. This result paves the way toward the potential use of poly(metha)acrylate/azobenzene polymer films as active layer for optical input/electrical output memory elements.
机译:响应性聚合物材料在受到外部刺激时会改变其性能。在这项工作中,热敏性聚(甲基)丙烯酸酯/偶氮苯聚合物的薄膜被探索为光可编程电可读存储器中的活性层。记忆效应基于偶氮苯介晶基团的光异构化诱导的膜形态的可逆修饰。当薄膜处于液晶相时,反式顺式异构化在介观尺度上引起主要的表面重组,其特征在于膜的有效厚度减小。膜电导率是在垂直的两端子设备中测量的,其中聚合物被夹在Au触点和液态E-GaIn液滴之间。我们证明了反式?顺式异构化伴随着薄膜电导的可逆100倍变化。这样,可以通过不同波长的光照射将装置设置为高电阻状态或低电阻状态。该结果为聚(甲基)丙烯酸酯/偶氮苯聚合物膜作为光输入/电输出存储元件的活性层的潜在用途铺平了道路。

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