Single CuO_x Nanowire Memristor: Forming-Free Resistive Switching Behavior

摘要

CuO_x. nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nano-crystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuO_x nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy.