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首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Enhancement of cross-plane thermal conductivity and mechanical strength via vertical aligned carbon nanotube@graphite architecture
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Enhancement of cross-plane thermal conductivity and mechanical strength via vertical aligned carbon nanotube@graphite architecture

机译:通过垂直排列的碳纳米管@石墨结构增强横断面的导热性和机械强度

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A three-dimensional (3D) carbon nanotube/exfoliated graphite block (CNT/EGB) was prepared by growing vertical aligned carbon nanotube (VACNT) at the surface of SiO2-coated exfoliated graphite plate (EGP) through chemical vapor deposition followed by hot-pressing. In such 3D CNT/EGB, EGPs were bridged by the VACNTs in the cross-plane direction, and the interface between EGPs and VACNTs was covalently bonded by SiC which formed by reaction of SiO2 and the adjacent carbon of EGPs and VACNTs. The length and growth density of VACNTs were adjusted by the growth time and concentration of catalysts. Thermal conductivity and mechanical strength of CNT/EGB were controlled by the growth states of VACNTs and hot-pressing. CNT/EGB showed a maximum cross-plane thermal conductivity (k perpendicular to) of 38 W/mK, which is more than twice as much as that of EGB (14 W/mK). A remarkable increase in k perpendicular to was attributed to the efficient heat flow of VACNTs bridging EGPs in the cross-plane direction and the thermal conductive SiC interface between VACNTs and EGPs. Additionally, the increased bending (76 MPa) and compressive strength (59 MPa) of CNT/EGB was due to the combination of strong pull-out effect of high-density nanotubes and the strong covalent interconnections between VACNTs and EGPs. (C) 2016 Elsevier Ltd. All rights reserved.
机译:通过化学气相沉积法在SiO2涂层的剥落石墨板(EGP)的表面上生长垂直排列的碳纳米管(VACNT),从而制备三维(3D)碳纳米管/剥落的石墨块(CNT / EGB),紧迫。在这样的3D CNT / EGB中,EGP在横断面方向上被VACNT桥接,EGP和VACNT之间的界面通过SiO2与EGP和VACNT的相邻碳反应形成的SiC共价键合。 VACNT的长度和生长密度通过催化剂的生长时间和浓度来调节。 CNT / EGB的热导率和机械强度受VACNTs的生长状态和热压控制。 CNT / EGB的最大横断面热导率(垂直于k)为38 W / mK,是EGB(14 W / mK)的两倍。垂直于k的k显着增加归因于VACNT在跨平面方向上桥接EGP的有效热流以及VACNT和EGP之间的导热SiC界面。此外,CNT / EGB的弯曲(76 MPa)和抗压强度(59 MPa)增加是由于高密度纳米管的强拔出效应和VACNT和EGP之间的强共价互连所导致的。 (C)2016 Elsevier Ltd.保留所有权利。

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