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Superior high-temperature oxidation resistance of magnetron sputtered Hf-B-Si-C-N film

机译:磁控溅射Hf-B-Si-C-N膜的优异的高温抗氧化性

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A hard and optically transparent amorphous Hf7B23Si17C4N45 film with a contamination level less than 4 at%, prepared by reactive pulsed de magnetron sputtering, was subjected to systematic investigation of high-temperature oxidation behavior in air up to 1700 degrees C. We focus on thermogravimetric analysis of the film in air and on the evolution of the film structure, microstructure and elemental composition with an annealing temperature ranging from 1100 degrees C to 1700 degrees C. The film exhibits a superior oxidation resistance up to 1600 degrees C due to a formation of a nanocomposite protective oxide layer on the surface above 1000 degrees C. The layer consists of monoclinic and tetragonal (or orthorhombic) HfO2 nanocrystallites surrounded by a SiO2-based amorphous matrix, most probably containing boron. The HfO2 nanocrystallites exhibit a gradient in size with a dense population of small (a couple of nm) crystallites next to the interface and larger but dispersed crystallites close to the surface. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:通过反应性脉冲磁控管溅射制备的硬质且光学透明的无定形Hf7B23Si17C4N45污染水平小于4 at%的薄膜,经受了高达1700摄氏度的空气中高温氧化行为的系统研究。退火温度在1100摄氏度至1700摄氏度范围内时,薄膜在空气中的含量以及薄膜结构,微观结构和元素组成的演变。由于形成了碳纳米管,该薄膜在1600摄氏度以下表现出优异的抗氧化性高于1000摄氏度的表面上的纳米复合保护性氧化层。该层由单斜晶和四方(或正交)的HfO2纳米微晶组成,周围环绕着SiO2基非晶态基质,最可能含有硼。 HfO2纳米微晶的尺寸呈现梯度,界面附近有密集的小(几纳米)微晶,靠近表面的是较大但分散的微晶。 (C)2015 Elsevier Ltd和Techna Group S.r.l.版权所有。

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