首页> 外文期刊>CERAMICS INTERNATIONAL >Fabrication of thin-film gadolinia-doped ceria (GDC) interdiffusion barrier layers for intermediate-temperature solid oxide fuel cells (IT-SOFCs) by chemical solution deposition (CSD)
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Fabrication of thin-film gadolinia-doped ceria (GDC) interdiffusion barrier layers for intermediate-temperature solid oxide fuel cells (IT-SOFCs) by chemical solution deposition (CSD)

机译:通过化学溶液沉积(CSD)制备用于中温固体氧化物燃料电池(IT-SOFC)的掺g氧化铈(GDC)薄膜互扩散阻挡层

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摘要

A dense gadolinia-doped ceria (GDC) interdiffusion barrier layer as thin as 300 nm was successfully fabricated on a rigid anode/electrolyte bilayer substrate using the chemical solution deposition (CSD) process for intermediate temperature solid oxide fuel cells (SOFCs). Drying-related macro-defects were removed by employing drying control chemical additives (DCCA), which effectively relieved drying stresses. The major process flaws caused by the constraining effects of the rigid substrate were completely eliminated by the addition of GDC nanoparticles into the chemical solution, which suppressed the generation of microstructural anisotropy by mitigating the predominant bi-axial substrate constraints. As a consequence, a thin film GDC interlayer was successfully deposited with a high volumetric density, effectively preventing the chemical interaction between the electrolyte and cathode during the fabrication process and subsequent operation. The cell test and microstructural analysis confirmed excellent electrochemical performance and structural and chemical stability. The CSD process presented in this paper is considered to be a promising technology for the practical preparation of GDC thin film barrier layers for intermediate temperature SOFCs based on the film quality, processing costs and potential for large-scale production.
机译:使用用于中温固体氧化物燃料电池(SOFC)的化学溶液沉积(CSD)工艺,在刚性阳极/电解质双层基板上成功制备了厚度仅为300 nm的致密掺杂氧化ado的二氧化铈(GDC)互扩散阻挡层。通过使用干燥控制化学添加剂(DCCA)可以消除干燥相关的宏观缺陷,从而有效缓解干燥应力。通过将GDC纳米粒子添加到化学溶液中,可以完全消除由刚性基板的约束作用引起的主要工艺缺陷,这可以通过减轻主要的双轴基板约束来抑制微结构各向异性的产生。结果,成功地以高体积密度沉积了薄膜GDC中间层,从而有效地防止了在制造过程和后续操作期间电解质与阴极之间的化学相互作用。电池测试和微结构分析证实了优异的电化学性能以及结构和化学稳定性。基于膜的质量,加工成本和大规模生产的潜力,本文介绍的CSD工艺被认为是用于中温SOFC的GDC薄膜阻挡层的实际制备的有前途的技术。

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