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Development of standard cell libraries using variable driving strength cell layout generation system

机译:使用可变驱动强度单元布局生成系统开发标准单元库

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摘要

We developed standard cell libraries for three deep submicron processes using VARDS(VARiable Driving Strength). VARDS is improved to consider the design rules dedicated to very deep submicron technologies. VARDS can generate cell layouts for almost all current technologies. Thanks to VARDS, these cell libraries can be developed in short time and they are competitive in performance compared with commercial libraries. These libraries will be distributed to educational institutions by VDEC and used to design LSIs.
机译:我们使用VARDS(可变驱动强度)为三个深亚微米工艺开发了标准细胞库。 VARDS进行了改进,以考虑专用于非常深的亚微米技术的设计规则。 VARDS可以为几乎所有当前技术生成单元布局。多亏了VARDS,这些细胞库可以在短时间内开发出来,并且与商业库相比,它们在性能上具有竞争力。这些库将由VDEC分发给教育机构,并用于设计LSI。

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